Goford Semiconductor

Since the foundation in 1995, Goford Semiconductor has been developing into a global company with offices in the USA, Australia, Shenzhen, Jiangsu, and Hong Kong. We have been always devoting in the R&D and sales of the power Mosfet products. We focus on the energy efficiency, mobility, and reliability to provide cost effective products to the market. We are committed to trying our best to satisfy customers’ needs, provide the most reliable and cost effective products, innovate and do better every day, partner with engineers and customers for mutual value, and work harder to realize our commitment.

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G02P06

P60V,RD(MAX)<190M@-10V,RD(MAX)<2

GT52N10T

N100V,RD(MAX)<9M@10V,RD(MAX)<15M

18N10

N100V,RD(MAX)<53M@10V,RD(MAX)<63

G30N03D3

N30V,RD(MAX)<7M@10V,RD(MAX)<12M@

G29

P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4

G1002L

N100V,RD(MAX)<250M@10V,VTH1.2V~2

630A

N200V,RD(MAX)<280M@10V,VTH1V~3V,

G48N03D3

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